Photoluminescence and raman spectra of flux processed bulk single crystal GaN

Materials Research Society Symposium Proceedings

Volumn 680, Issue , 2001, Pages 262-267

  Cho, Chae Ryong ^a   Park, Sang Eon ^a,b   Cho, Yong Chan ^a,b   Jeong, Se Young ^b  

^a Advanced Materials Research Laboratory ^*  (South Korea)

^b Pusan National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; PHONONS; PHOTOLUMINESCENCE; RAMAN SCATTERING; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

BULK WURTZITE-GAN CRYSTAL; COMPOSITIONAL PROPERTY; FLUX METHOD;

SINGLE CRYSTALS;

EID: 34249899394     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-680-e9.10     Document Type: Conference Paper

References (23)

1. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushida, H. Kiyoku, Y. Sugimoto, Jpn. J. Appl. Phys. 35, L74 (1996).
2. S. Nakamura, M. Senoh, N. Iwasa, S. Nagasawa, T. Yamada, T. Mukai, Jpn. J. Appl. Phys. 34, L1332 (1995).
3. S.D. Lester, F.A. Ponce, M.G. Crawford, D.A. Steigerwald, Appl. Phys. Lett. 66, 1249 (1995).
4. S. Krukowski, Cryst. Res. Technol. 34, 785 (1999).
5. S. Porowski, I. Grzegory, J. Crystal Growth 178, 174 (1997).
6. R. J. Molnar, W. Gotz, L. T. Romano, and N. M. Johnson, J. Crystal Growth 178, 147 (1997).
7. E. Valcheva, T. Paskova, S. Tungasmita, P. O. A. Persson, J. Birch, E. B. Svedberg, L. Hultman, and B. Monemar, Appl. Phys. Lett 76, 1860 (2000).
8. R. S. Qhalid Fareed, S. Tottori, K. Nishino, S. Sakai, J. Crystal Growth 200, 348 (1999).
9. P. Visconti, K. M. Jones, M. A. Reshchikov, F. Yun, R. Cingolani, H. Morkoc, S. S. Park, and K. Y. Lee, Appl. Phys. Lett. 77, 3743 (2000)
10. D. R. Gibert, A. Novikov, N. Partrin, J. S. Budai, F. Kelly, R. Chodelka, R. Abbashian, S. J. Pearton, and R. Singh, Appl. Phys. Lett 77, 4172 (2000).
11. M. Yano, M. Okamoto, Y. K. Yap, M. Yoshimura, Y. Mori, and T.Sasaki, Diamond and Related Material 9, 512 (2000).
12. H. Yamane, M. Shimada, T. Sekiguchi, and F. J. DiSalvo, J. Crystal Growth 186, 8 (1998).
13. M. Yano, M. Okamoto, Y. K. Yap, M. Yoshimura, Y. Mori and T. Sasaki, Jpn. J. Appl. Phys. 38, L1121 (1999).
14. U. Kaufmann, M. Kunzer, H. Obloh, M. Maier, Ch. Manz, A. Ramakrishnam, and B. Santic, Phys. Rev. B 59, 5561 (1999)
15. T. Kozawa, T. Kachi, H. Kano, Y. Taga, and M. Hashimoto, N. Koide and K. Manabe, J. Appl. Phys. 75, 1098 (1994).
16. P. Perlin, C. Jauberthic-Carillon, J. P. Itie, A. Miguel, I. Grzegory, A. Polian, Phys. Rev. B 45, 83 (1992).
17. H. Siegle, L. Eckey, A. Hoffmann, and C. Thomsen, B. K. Meyer, Solid State Communications, 96, 943 (1995).
18. P. Perlin, J. Camassel, W. Knap, T. Taliercio, J. C. Chervin, T. Suski, I. Grzegory, and S. Porowski, Appl. Phys. Lett. 67, 2524 (1995).
19. D. R. Gibert, A. Novikov, N. Partrin, J. S. Budai, F. Kelly, R. Chodelka, R. Abbashian, S. J. Pearton, and R. Singh, Appl. Phys. Lett 77, 4172 (2000).
20. S.D. Lester, F.A. Ponce, M.G. Craford, D.A. Steigerwald, Appl. Phys. Lett. 66, 1249 (1995)
21. F. Demangeot, J. Frandon, M. A. Renucci, C. Meny, O. Briot, and R. L. Aulombard, J. Appl. Phys. 82, 1305 (1997).
22. J. M. Hayes and M. Kuball, A. Bell, I. Harrison, D. Korakakis, and C. T. Foxon, Appl. Phys. Lett, 75 , 2097 (1999).
23. S. D. Wolter, B. P. Luther, D. L. Waltemyer, C. Onneby, and S. E. Mohney, R. J. Molnar, Appl. Phys. Lett, 70, 2156 (1997).