Nitrogen dioxide sensing properties of tellurium based films by thermal treatment

Proceedings of the International Semiconductor Conference, CAS

Volumn 1, Issue , 2003, Pages 197-200

  Tsiulyanu, A ^a   Marian, S ^a,b   Pushcach, B ^c   Tsiulyanu, D ^a   Liess, H D ^b  

^a TECHNICAL UNIVERSITY OF MOLDOVA   (Moldova)

^b BUNDESWEHR UNIVERSITY MUNICH   (Germany)

^c INSTITUTE OF CHEMISTRY   (Moldova)

Author keywords

Annealing; Charge carrier processes; Conductive films; Conductivity; Crystals; Electric resistance; Nitrogen; Semiconductor films; Tellurium; Temperature sensors

Indexed keywords

ANNEALING; CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; FILM GROWTH; MOLECULES; NITROGEN; NITROGEN OXIDES; SEMICONDUCTING TELLURIUM; TELLURIUM; TEMPERATURE SENSORS;

CHARGE CARRIER PROCESS; ELECTRICAL AND SENSING PROPERTIES; ELECTRICAL RESISTANCES; LONE PAIR ELECTRONS; NITROGEN DIOXIDES; SEMI-CONDUCTOR SURFACES; SEMICONDUCTOR FILMS; STRUCTURAL EVOLUTION;

CONDUCTIVE FILMS;

EID: 34249898552     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMICND.2003.1251376     Document Type: Conference Paper

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