In0.68 Ga0.32 As Al0.64 In0.36 AsInP 4.5 μm quantum cascade lasers grown by solid phosphorus molecular beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 3, 2007, Pages 913-915

  Chen, J ^a,b   Malis, O ^a,c   Sergent, A M ^a   Sivco, D L ^a   Weimann, N ^a   Cho, A Y ^a  

^a LUCENT TECHNOLOGIES   (United States)

^b Princeton University   (United States)

^c BINGHAMTON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FACETS; PULSE MODES; QUANTUM CASCADE LASERS; ROOM TEMPERATURE; WAVEGUIDE LOSSES;

CARRIER MOBILITY; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; STRAIN; THRESHOLD CURRENT DENSITY; WAVEGUIDES;

SEMICONDUCTOR LASERS;

EID: 34249893062     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2740287     Document Type: Article

References (9)

1. C. Gmachl, F. Capasso, D. L. Sivco, and A. Y. Cho, Rep. Prog. Phys. 64, 1533 (2001).
2. J. S. Yu, S. Slivken, S. R. Darvish, A. Evans, B. Gokden, and M. Razeghi, Appl. Phys. Lett. 87, 041101 (2005).
3. J. S. Yu, S. Slivken, A. Evans, L. Doris, and M. Razeghi, Appl. Phys. Lett. 83, 2503 (2003).
4. S. Yu, S. R. Darvish, A. Evans, J. Nguyen, S. Slivken, and M. Razeghi, Appl. Phys. Lett. 88, 041111 (2006).
5. M. Troccoli, Appl. Phys. Lett. 85, 5842 (2004).
6. L. Diehl, Appl. Phys. Lett. 88, 041102 (2006).
7. O. Malis, 18th International Conference on InP and Related Materials, Princeton, NJ, 8-11 May 2006, MB-1.4.
8. J. N. Baillargeon, A. Y. Cho, and R. J. Fischer, J. Vac. Sci. Technol. B 13, 64 (1995).
9. P. Y. Yu and M. Cardona, Fundamentals of Semiconductors, Physics and Material Properties (Springer, Berlin, 2001), Chap., p. 306.