A planar-gate high-conductivity IGBT (HiGT) with hole-barrier layer

IEEE Transactions on Electron Devices

Volumn 54, Issue 6, 2007, Pages 1515-1520

  Mori, Matsuhiro ^a   Oyama, Kazuhiro ^a   Arai, Taiga ^a   Sakano, Junichi ^a   Nishimura, Yoshitaka ^a   Masuda, Koutarou ^a   Saito, Katsuaki ^a   Uchino, Yoshihiro ^b   Homma, Hideo ^c  

^a HITACHI LTD   (Japan)

^b Zeon Europe GmbH   (Germany)

^c HITACHI MAXELL LTD   (Japan)

Author keywords

Collector emitter saturation voltage; Insulated gate bipolar transistor (IGBT); Short circuit capability

Indexed keywords

CARRIER CONCENTRATION; HOLE MOBILITY; MOS DEVICES; SHORT CIRCUIT CURRENTS;

BLOCKING VOLTAGE; COLLECTOR-EMITTER SATURATION VOLTAGE; HOLE-BARRIER LAYER;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

EID: 34249878216     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.895874     Document Type: Article

References (15)

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