Maskless plasma etching of diamond cones: The role of CH4 gas and enhanced field emission property

Journal of Physical Chemistry C

Volumn 111, Issue 19, 2007, Pages 7058-7062

  Wang, Q ^a   Li, J J ^a   Li, Y L ^a   Wang, Z L ^a   Gu, C Z ^a   Cui, Z ^b  

^a INSTITUTE OF PHYSICS   (China)

^b RUTHERFORD APPLETON LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS CARBON; CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; FIELD EMISSION; METHANE; PLASMA ETCHING; POLYCRYSTALLINE MATERIALS;

AMORPHOUS CARBON LAYERS; EMISSION CURRENT DENSITY; HIGH FIELD ELECTRON EMISSION; HOT FILAMENT CHEMICAL VAPOR DEPOSITION (HFCVD);

DIAMOND FILMS;

EID: 34249797611     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp069042l     Document Type: Article

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