The role of niobium in (Ca, Si, Ce, Nb)-doped TiO2 varistors

Key Engineering Materials

Volumn 280-283, Issue I, 2005, Pages 297-300

  Luo, Shaohua ^a   Tang, Zilong ^a   Li, Hongyun ^b   Zhang, Zhongtai ^a   Xiong, Xizhou ^b  

^a TSINGHUA UNIVERSITY   (China)

^b Guangzhou Sunrise Electronic Corporation (Ltd)   (China)

Author keywords

Ce Nb TiO2 varistor; Electrical property; Microstructure; Second phase

Indexed keywords

DOPING (ADDITIVES); ELECTRIC PROPERTIES; MICROSTRUCTURE; NIOBIUM; PERMITTIVITY; SCANNING ELECTRON MICROSCOPY; TITANIUM DIOXIDE;

NONLINEAR COEFFICIENT; ROOM TEMPERATURE; SECOND PHASE;

VARISTORS;

EID: 34249746310     PISSN: 10139826     EISSN: 16629795     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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