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Volumn 7, Issue 5, 2007, Pages 1129-1133

Voltage-induced dependence of Raman-active modes in single-wall carbon nanotube thin films

Author keywords

[No Author keywords available]

Indexed keywords

KOHN ANOMALIES; RAMAN MEASUREMENTS; RAMAN-ACTIVE OPTICAL BRANCHES;

EID: 34249744735     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl062418m     Document Type: Article
Times cited : (6)

References (36)
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    • Zhou, Y.; et al. Nano Lett. 2004, 4, 2031.
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    • See Supporting Information
    • See Supporting Information.
  • 22
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    • 198. See arXiv:cond-mat/0611714
    • Pisana, S.; et al. Nat. Mat. 2007,6, 198. See arXiv:cond-mat/0611714.
    • (2007) Nat. Mat , vol.6
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    • Ashcroft, N. W.; Mermin, N. D. Solid State Physics; ref 17, 1976; p 515.
    • Ashcroft, N. W.; Mermin, N. D. Solid State Physics; ref 17, 1976; p 515.
  • 25
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    • For instance, at T= 0 K, eq 3 would lead to ∈ (△k, ℏw, l ∼ log, x, l)2, XE, y)2[(x, l) 2, XE, y)2, with x, q/2kF, XE, △k(Eext)/2kF, and y, mwlnq so that Kohn anomalies (x, 1) correspond, in the absence of field, to an infinite static response ∈ (0,0, 1→ ∞ and a null dynamic response ∈(0, ℏw, 1, 0 while, in the presence of field, ∈△k, 0, 1→ ∞
    • F, and y = mwlnq so that Kohn anomalies (x = 1) correspond, in the absence of field, to an infinite static response ∈ (0,0) - 1→ ∞ and a null dynamic response ∈(0, ℏw) -1 = 0 while, in the presence of field, ∈(△k, 0) - 1→ ∞.
  • 26
    • 34249664906 scopus 로고    scopus 로고
    • Actually, the use of the Lindhard model relies on the adiabatic Born-Oppenheimer approximation which, as verified below, still holds in our SWNT thin films. In contrast, our adiabatic model will be inadequate in nonadiabatic systems e.g, graphene
    • Actually, the use of the Lindhard model relies on the adiabatic Born-Oppenheimer approximation which, as verified below, still holds in our SWNT thin films. In contrast, our adiabatic model will be inadequate in nonadiabatic systems (e.g., graphene).
  • 29
    • 33644516293 scopus 로고    scopus 로고
    • Nevertheless, while the changes achieved including possible anharmonic effects in our model are low, the influence on the electron screening of the alternating electric fields used for Raman excitation might also be considerable. This would suggest that our model might also be useful in explaining the temperature dependence of the Raman peaks of SWNT thin films in the absence of a constant external field
    • Zhou, Z.; et al. J. Phys. Chem. B 2006, 110, 1206. Nevertheless, while the changes achieved including possible anharmonic effects in our model are low, the influence on the electron screening of the alternating electric fields used for Raman excitation might also be considerable. This would suggest that our model might also be useful in explaining the temperature dependence of the Raman peaks of SWNT thin films in the absence of a constant external field.
    • (2006) J. Phys. Chem. B , vol.110 , pp. 1206
    • Zhou, Z.1
  • 30
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    • The relaxation times determined within our model are of the order of magnitude available in literature (see ref 22, p 10, Furthermore, straightforward Drude analysis of the ellipsometry spectra of our samples (ref 2) also leads to τ ∼ 10-15 s. We suspect that especially intertube processes between one m-SWNT and one s-SWNT are important in lowering the relaxation times, since s-SWNTs may act as thermal sink ref 15, Thus, the higher the participation of s-SWNTs to electrical transport, the smaller TINTER. Impurities might also contribute in decreasing both intra- and intertube relaxation times
    • -15 s. We suspect that especially intertube processes between one m-SWNT and one s-SWNT are important in lowering the relaxation times, since s-SWNTs may act as thermal sink (ref 15). Thus, the higher the participation of s-SWNTs to electrical transport, the smaller TINTER. Impurities might also contribute in decreasing both intra- and intertube relaxation times.
  • 31
    • 34249742070 scopus 로고    scopus 로고
    • u∥ and u∝ represent, in each SWNT, the modes polarization longitudinal and transversal to the electric field
    • u∥ and u∝ represent, in each SWNT, the modes polarization longitudinal and transversal to the electric field.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.