In-doped Pb0.5Sn0.5Te p-type samples prepared by powder metallurgical processing for thermoelectric applications

Physica B: Condensed Matter

Volumn 396, Issue 1-2, 2007, Pages 16-21

  Gelbstein, Y ^a   Dashevsky, Z ^a   Dariel, M P ^a  

^a BEN GURION UNIVERSITY OF THE NEGEV   (Israel)

Author keywords

Figure of merit; Lead tin telluride semiconductor; Properties; Thermoelectrics

Indexed keywords

ANNEALING; INDIUM; LEAD POWDER METALLURGY; SEMICONDUCTOR DOPING; THERMAL CONDUCTIVITY; THERMOELECTRICITY;

COLD COMPACTION; LEAD TIN TELLURIDE SEMICONDUCTORS; THERMOELECTRIC APPLICATIONS;

SEMICONDUCTING LEAD COMPOUNDS;

EID: 34249336368     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2007.02.067     Document Type: Article

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