Photoelectrochemical characterization of p-type silicon electrodes covered with tunnelling nitride dielectric films

Thin Solid Films

Volumn 515, Issue 18, 2007, Pages 7376-7381

  Lana Villarreal, T ^a,b   Straboni, A ^a   Pichon, Luc ^a   Alonso Vante, N ^a  

^a UNIVERSITÉ DE POITIERS   (France)

^b UNIVERSITY OF ALICANTE   (Spain)

Author keywords

Aqueous electrolyte; Electrochemical properties; Nitrides; Photoelectrochemistry

Indexed keywords

CRYSTALS; DIELECTRIC FILMS; ELECTRIC FIELD EFFECTS; ELECTRODES; ELECTRON TUNNELING; NITRIDATION; PHOTOCHEMICAL REACTIONS; SOLUTIONS;

AQUEOUS ELECTROLYTE; NORDHEIM TUNNELLING MECHANISM; OVERVOLTAGE; PHOTOCURRENT DENSITIES;

SILICON;

EID: 34249317284     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.02.103     Document Type: Article

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