Theoretical electron mobility analysis in thin-body FETs: Dependence on substrate orientation and biaxial strain

IEEE Transactions on Nanotechnology

Volumn 6, Issue 3, 2007, Pages 334-340

  Sverdlov, Viktor ^b   Ungersboeck, Stephan Enzo ^b   Kosina, Hans ^a,b  

^a IEEE   (Austria)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

Double gate MOSFET; Mobility; Monte Carlo simulations; Volume inversion

Indexed keywords

BIAXIAL STRAIN; DOUBLE-GATE MOSFET; VOLUME INVERSION;

COMPUTER SIMULATION; FIELD EFFECT TRANSISTORS; MONTE CARLO METHODS; STRAIN; SUBSTRATES;

CARRIER MOBILITY;

EID: 34248675507     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2007.894835     Document Type: Article

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