A 4-Kb 667-MHz CMOS SRAM using dynamic threshold voltage wordline transistors

2003 Southwest Symposium on Mixed-Signal Design, SSMSD 2003

Volumn , Issue , 2003, Pages 90-93

  Wang, Chua Chin ^a,b   Chen, Tian Hau ^a   Hu, Ron ^a,b  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b Asuka Semiconductor Inc   (Taiwan)

Author keywords

CMOS process; Manufacturing processes; MOSFETs; Power supplies; Prototypes; Random access memory; Semiconductor device manufacture; Threshold voltage; Time measurement; Voltage control

Indexed keywords

BANDPASS FILTERS; CMOS INTEGRATED CIRCUITS; DESIGN; DRAIN CURRENT; MANUFACTURE; MIXED SIGNAL INTEGRATED CIRCUITS; MOSFET DEVICES; RANDOM ACCESS STORAGE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES; STATIC RANDOM ACCESS STORAGE; THRESHOLD VOLTAGE; TIME MEASUREMENT; TRANSISTORS; VOLTAGE CONTROL;

CMOS PROCESSS; MANUFACTURING PROCESS; MOSFETS; POWER SUPPLY; PROTOTYPES; RANDOM ACCESS MEMORY;

INTEGRATED CIRCUIT DESIGN;

EID: 34248655839     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SSMSD.2003.1190403     Document Type: Conference Paper

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