Use of an asymmetric pulse profile for higher crystalline volumes from excimer laser crystallization of amorphous silicon

Applied Physics Letters

Volumn 90, Issue 17, 2007, Pages

  Adikaari, A A D T ^a   Mudugamuwa, N K ^a   Silva, S R P ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CRYSTALLIZATION; GAUSSIAN BEAMS; HYDROGEN; LASER PULSES; NANOCRYSTALLINE MATERIALS;

ASYMMETRIC PULSE PROFILE; CRYSTALLINE VOLUMES; ELECTRON FIELD EMISSION COLD CATHODES; ENERGY DENSITY;

EXCIMER LASERS;

EID: 34248594253     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2731664     Document Type: Article

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