Observations of the influence of threading dislocations on the recombination enhanced partial dislocation glide in 4H -silicon carbide epitaxial layers

Applied Physics Letters

Volumn 90, Issue 17, 2007, Pages

  Chen, Y ^a   Dudley, M ^a   Liu, K X ^b   Stahlbush, R E ^b  

^a Stony Brook University   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PARTIAL DISLOCATION GLIDE; SHOCKLEY PARTIAL DISLOCATIONS; SILICON CARBIDE EPITAXIAL LAYERS; THREADING DISLOCATIONS;

DIPOLE MOMENT; PRISMS; SILICON CARBIDE; STACKING FAULTS;

EPITAXIAL LAYERS;

EID: 34248592779     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2734499     Document Type: Article

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