New observations on the luminescence decay lifetime of Mn2+ in ZnS: Mn2+ nanoparticles

Journal of Chemical Physics

Volumn 123, Issue 12, 2005, Pages

  Chen, Wei ^a   Aguekian, Vadim F ^b   Vassiliev, Nikolai ^b   Serov, A Yu ^b   Filosofov, N G ^b  

^a ICx Technologies   (United States)

^b ST PETERSBURG STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

DECAY LIFETIME; EXCITATION POWER; LUMINESCENCE DECAY;

DOPING (ADDITIVES); LUMINESCENCE; NANOSTRUCTURED MATERIALS; POSITIVE IONS; ZINC SULFIDE;

MANGANESE;

EUROPIUM; ION; MANGANESE; NANOMATERIAL; NANOPARTICLE; SULFIDE; ZINC; ZINC DERIVATIVE; ZINC SULFIDE;

ARTICLE; CHEMISTRY; LUMINESCENCE; METHODOLOGY; NANOTECHNOLOGY; PHYSICAL CHEMISTRY; SPECTROFLUOROMETRY; TIME; X RAY DIFFRACTION;

CHEMISTRY, PHYSICAL; EUROPIUM; IONS; LUMINESCENCE; MANGANESE; NANOPARTICLES; NANOSTRUCTURES; NANOTECHNOLOGY; SPECTROMETRY, FLUORESCENCE; SULFIDES; TIME FACTORS; X-RAY DIFFRACTION; ZINC; ZINC COMPOUNDS;

EID: 34248573966     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2046667     Document Type: Article

References (21)

1. R. N. Bhargava, D. Gallagher, X. Hong, and A. Nurmikko, Phys. Rev. Lett. 72, 416 (1994).
2. R. N. Bhargava, D. Gallagher, and T. Welker, J. Lumin. 60-1, 275 (1994).
3. W. G. Becker and A. J. Bard, J. Phys. Chem. 87, 4888 (1983).
4. A. Bol and A. Meijerink, Phys. Rev. B 58, R15997 (1998).
5. N. Murase, R. Jagannathan, Y. Kanematsu, M. Watanabe, A. Kurita, K. Hirata, T. Yazawa, and T. Kushida, J. Phys. Chem. B 103, 754 (1999).
6. B. A. Smith, J. Z. Zhang, A. Joly, and J. Liu, Phys. Rev. B 62, 2021 (2000).
7. J. H. Chung, C. S. Ah, and D.-J. Jang, J. Phys. Chem. B 105, 4128 (2001).
8. W. Chen, R. Sammynaiken, and Y. N. Huang, J. Appl. Phys. 88, 5188 (2000).
9. W. Chen, R. Sammynaiken, Y. N. Huang, J. O. Malm, R. Wallenberg, J. O. Bovin, V. Zwiller, and N. A. Kotov, J. Appl. Phys. 89, 1120 (2001).
10. M. Konishi, T. Isobe, and M. Senna, J. Lumin. 93, 1 (2001).
11. K. Yan, C. K. Duan, Y. Ma, S. D. Xia, and J. C. Krupa, Phys. Rev. B 58, 13585 (1998).
12. M. Godlewski, V. Yu. Ivanov, P. J. Bergman, B. Monemar, Z. Golacki, and G. Karczewski, J. Alloys Compd. 341, 8 (2002).
13. M. Godlewski, S. Yatsunenko, A. Khachapuridze, V. Yu. Ivanov, Z. Golacki, G. Karczewski, P. J. Bergman, P. J. Klar, W. Heimbrodt, and M. P. Phillips, J. Alloys Compd. 380, 45 (2004).
14. W. Chen, F. Su, G. H. Li, A. G. Joly, J.-O. Malm, and J.-O. Bovin, J. Appl. Phys. 92, 1950 (2002).
15. V. F. Agekyan, N. N. Vassiliev, A. Yu. Serov, N. G. Filosofov, and V. N. Yakimovich, Phys. Solid State 43, 1626 (2001).
16. N. N. Vassiliev (unpublished).
17. C. de Mello Donega, A. A. Bol, and A. Meijerink, J. Lumin. 96, 87 (2002).
18. V. F. Agekyan, N. N. Vassiliev, and S. V. Pogarev, Phys. Tech. Semiconductors 21, 319 (1987).
19. W. Chen, A. G. Joly, and J. Z. Zhang, Phys. Rev. B 64, 041202 (R) (2001).
20. A. G. Joly, W. Chen, J. Roark, and J. Z. Zhang, J. Nanosci. Nanotechnol. 1, 295 (2001).
21. S. Biernacki, M. Kutrowski, G. Karczewski, T. Wojtowcz, and J. Kossut, Semicond. Sci. Technol. 11, 48 (1996).