The region ion sensitive field effect transistor, a novel bioelectronic nanosensor

Biosensors and Bioelectronics

Volumn 22, Issue 12, 2007, Pages 3105-3112

  Risveden, K ^a   Ponten J F ^a   Calander, N ^b   Willander, M ^b   Danielsson, B ^a  

^a LUND UNIVERSITY   (Sweden)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Atomic force microscopy; Electron beam lithography; Nanosensor; Nanostructures

Indexed keywords

ATOMIC FORCE MICROSCOPY; BIOELECTRIC PHENOMENA; ELECTRIC FIELD EFFECTS; ELECTRON BEAM LITHOGRAPHY; GLUCOSE; NANOSENSORS; ELECTRODES; FUSED SILICA; ION SENSITIVE FIELD EFFECT TRANSISTORS;

BIOELECTRONIC NANOSENSORS; CHARGED REACTION; GLUCOSE MEASUREMENTS; SENSOR CHIPS;

ION SENSITIVE FIELD EFFECT TRANSISTORS; ENZYME ELECTRODES;

ENZYME; GLUCONIC ACID; GLUCOSE;

ARTICLE; BIOSENSOR; CHEMICAL ANALYSIS; CHEMICAL REACTION; CONTROLLED STUDY; ELECTRIC FIELD; ELECTRODE; ELECTRON BEAM; FIELD EFFECT TRANSISTOR; MEASUREMENT; NANOCHIP; NANOSENSOR; NONHUMAN; REGION ION SENSITIVE FIELD EFFECT TRANSISTOR; SENSITIVITY ANALYSIS;

BIOSENSING TECHNIQUES; ELECTRIC IMPEDANCE; GLUCOSE; NANOTECHNOLOGY; TRANSISTORS;

CHIP ELECTRODES; CONDUCTING CHANNELS; DIFFERENT SIZES; ELECTRIC CONTROL; ELECTRICAL FIELD; ENZYME MOLECULES; GLUCOSE MEASUREMENTS; IN-FIELD; LIMIT OF DETECTION; LOW NOISE; NANOBIOSENSOR; PARTIAL VOLUMES; SENSING ELECTRODE; SENSOR CHIPS; SIGNAL CURRENT; WORKING DISTANCES;

EID: 34248570452     PISSN: 09565663     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.bios.2007.01.019     Document Type: Article

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