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Volumn 101, Issue 9, 2007, Pages

GaN hybrid microcavities in the strong coupling regime grown by metal-organic chemical vapor deposition on sapphire substrates

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; EXCITONS; GALLIUM NITRIDE; GROWTH (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; ULTRAVIOLET SPECTROGRAPHS;

EID: 34248524229     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2728744     Document Type: Conference Paper
Times cited : (20)

References (13)
  • 3
    • 0001450355 scopus 로고    scopus 로고
    • 0375-9601 10.1016/0375-9601(96)00175-2
    • A. Imamoglu and J. R. Ram, Phys. Lett. A 0375-9601 10.1016/0375-9601(96) 00175-2 214, 193 (1996).
    • (1996) Phys. Lett. A , vol.214 , pp. 193
    • Imamoglu, A.1    Ram, J.R.2
  • 13
    • 34248548280 scopus 로고    scopus 로고
    • private communication
    • Under low intensity continuous wave excitation, the localized exciton feature has about equal strength to that of the polariton emission [G. Christmann and R. Butt́ (private communication)]. At high excitation in Fig., the localized emission probably saturates, thus accounting for its very small relative intensity. It is notable that the width of the localized exciton peak in the full cavity is approximately a factor of two broader than the PL from the half cavity shown in Fig.. The reason for this is not fully understood, but may be due to nonuniform strain induced by the deposition of the top dielectric mirror.
    • Christmann, G.1    Butt́, R.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.