Dual work function phase controlled Ni-FUSI CMOS (NiSi NMOS, Ni 2Si or Ni31Si12 PMOS): Manufacturability, reliability & process window improvement by sacrificial SiGe cap

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2006, Pages 94-95

  Veloso, A ^a   Hoffmann, T ^a   Lauwers, A ^a   Brus, S ^a   De Marneffe, J F ^a   Locorotondo, S ^a   Vrancken, C ^a   Kauerauf, T ^a   Shickova, A ^a   Sijmus, B ^a   Tigelaar, H ^b   Pawlak, M A ^a   Yu, H Y ^a   Demeurisse, C ^a   Kubicek, S ^a   Kerner, C ^a   Chiarella, T ^a   Richard, O ^a   Bender, H ^a   Niwa, M ^a   Absil, P ^a   Jurczak, M ^a   Biesemans, S ^a   Kittl, J A ^b   more..

^a IMEC   (Belgium)

^b TEXAS INSTRUMENTS   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

GATE DIELECTRICS; NANOTECHNOLOGY; NICKEL COMPOUNDS; WORK FUNCTION; WSI CIRCUITS;

GATE LENGTHS; RELIABILITY EVALUATION;

CMOS INTEGRATED CIRCUITS;

EID: 34248403599     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. B. Tavel et al., IEDM Tech. Dig., 825 (2001);
2. J. Kedzierski et al., IEDM Tech. Dig., 247 (2002);
3. A. Veloso et al., IEDM Tech. Dig., 855 (2004);
4. K. Takahashi et al., IEDM Tech. Dig., 91 (2004);
5. J. A. Kittl et al., Symp. VLSI Tech., 72 (2005);
6. A. Lauwers et al., IEDM Tech. Dig., 661 (2005);
7. P. Ranade et al, IEDM Tech. Dig., 227 (2005).