Atomic arrangement variations of [0001]-tilt grain boundaries in ZnO thin films grown on p-Si substrates due to thermal treatment

Applied Physics Letters

Volumn 90, Issue 18, 2007, Pages

  Shin, J W ^a   Lee, J Y ^a   No, Y S ^b   Jung, J H ^b   Kim, T W ^b   Choi, W K ^c  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Hanyang University   (South Korea)

^c Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; GRAIN BOUNDARIES; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; SILICON; STRAIN RATE; ZINC OXIDE;

COLUMNAR STRUCTURE; P SI SUBSTRATES; PERIODIC ARRAY;

THIN FILMS;

EID: 34247873099     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2732177     Document Type: Article

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