Toughening due to domain switching in single crystal ferroelectric materials

International Journal of Fracture

Volumn 143, Issue 2, 2007, Pages 161-175

  Sheng, Jianshun ^a   Landis, Chad M ^a,b  

^a Rice University   (United States)

^b The University of Texas at Austin   (United States)

Author keywords

Domain switching; Ferroelectrics; Finite element methods; Fracture toughening; Single crystal

Indexed keywords

CRACK PROPAGATION; CRACK TIPS; CRYSTALLOGRAPHY; ENERGY RELEASE RATE; FINITE ELEMENT METHOD; FRACTURE TOUGHNESS; SINGLE CRYSTALS;

DOMAIN SWITCHING; SWITCHING HARDENING; TOUGHENING ANISOTROPY;

FERROELECTRIC MATERIALS;

EID: 34247628883     PISSN: 03769429     EISSN: 15732673     Source Type: Journal    
DOI: 10.1007/s10704-007-9056-7     Document Type: Article

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