Optical properties of ZnO phosphors activated with Mn and Se impurity

Journal of Optics (India)

Volumn 35, Issue 1, 2006, Pages 45-50

  Bhatti, H S ^a   Gupta, Atul ^a   Verma, N K ^b   Kumar, Sunil ^b  

^a PUNJABI UNIVERSITY   (India)

^b THAPAR UNIVERSITY   (India)

Author keywords

Doped ZnO; Nitrogen laser; Oscillator strength; Photoluminescence; Transition probability

Indexed keywords

CHEMICAL LASERS; CONCENTRATION (PROCESS); CRYSTAL IMPURITIES; MANGANESE; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SELENIUM; ZINC OXIDE; ENERGY TRANSFER; GAS LASERS; LIGHT EMISSION; PHOSPHORS; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTOR LASERS;

NITROGEN LASER; OSCILLATOR STRENGTH; PHOTOLUMINESCENCE DECAY CURVES; SEMICONDUCTOR PHOSPHORS; DOPED ZNO; ENERGY TRANSFER MECHANISMS; INTEGRATED CROSS SECTIONS; LASER-INDUCED PHOTOLUMINESCENCE; OSCILLATOR STRENGTHS; TIME-RESOLVED PHOTOLUMINESCENCE SPECTRUM; TRANSITION PROBABILITIES;

PHOSPHORS; PULSED LASERS;

EID: 34247627862     PISSN: 09700374     EISSN: None     Source Type: Journal    
DOI: 10.1007/bf03354795     Document Type: Article

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