Focused ion beam modifications of indium phosphide photonic crystals

Microelectronic Engineering

Volumn 84, Issue 5-8, 2007, Pages 1244-1247

  Nellen, Philipp M ^a   Strasser, Patric ^b   Callegari, Victor ^a   Wüest, Robert ^b   Erni, Daniel ^c   Robin, Franck ^b  

^a SWISS FEDERAL LABORATORIES FOR MATERIALS SCIENCE AND TECHNOLOGY   (Switzerland)

^b ETH ZURICH   (Switzerland)

^c UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

Focused ion beam modifications; Indium phosphide; Photonic crystals

Indexed keywords

FOCUSED ION BEAMS; INDIUM PHOSPHIDE; REACTIVE ION ETCHING; SEMICONDUCTING INDIUM COMPOUNDS;

INDIUM GALLIUM ARSENIDE PHOSPHIDE; SPLITTING RATIO;

PHOTONIC CRYSTALS;

EID: 34247604523     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.01.037     Document Type: Article

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