In-based quantum dots on AlxGa1-xAs surfaces

Microelectronic Engineering

Volumn 84, Issue 5-8, 2007, Pages 1443-1445

  Schramboeck, M ^a   Andrews, A M ^a   Roch, T ^a   Schrenk, W ^a   Strasser, G ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

AlGaAs; GaAs; InAs; Patterned substrates; Quantum dots

Indexed keywords

GROWTH TEMPERATURE; HOLOGRAPHY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS;

LASER HOLOGRAPHY; LOCAL STRAIN FIELDS; PATTERNED SUBSTRATES;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 34247584590     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.01.228     Document Type: Article

References (5)

1. Kar G.S., Kiravittaya S., Stoffel M., and Schmidt O.G. PRL 93 (2004) 246103
2. Schramboeck M., Schrenk W., Roch T., Andrews A.M., Austerer M., and Strasser G. Microelectron. Eng. 83 (2006) 1573
3. Lee H., Johnson J.A., Speck J.S., and Petroff P.M. J. Vac. Sci. Technol. B 18 (2000) 2193
4. Schramboeck M., Andrews A.M., Roch T., Schrenk W., and Strasser G. Microelectron. J. 37 (2006) 1532
5. Polimeni A., Patanè A., Henini M., Eaves L., and Main P.C. Phys. Rev. B 59 (1999)