Crystallization of double-layered silicon thin films by solid green laser annealing for high-performance thin-film transistors

IEEE Electron Device Letters

Volumn 28, Issue 5, 2007, Pages 395-397

  Sugawara, Yuta ^a   Uraoka, Yukiharu ^a   Yano, Hiroshi ^a   Hatayama, Tomoaki ^a   Fuyuki, Takashi ^a   Mimura, Akio ^b  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Crystallization; Green laser; Low temperature poly Si (LTPS); Thin film transistor (TFT)

Indexed keywords

AMORPHOUS SILICON; CRYSTALLIZATION; LASER APPLICATIONS; MULTILAYERS; POLYSILICON;

CRYSTAL GRAIN; GREEN LASER ANNEALING;

THIN FILM TRANSISTORS;

EID: 34247562851     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.895397     Document Type: Article

References (5)

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