Diagnostics of films and layers of nanometer thickness using middle energy ion scattering technique

Semiconductors

Volumn 41, Issue 4, 2007, Pages 487-490

  Afrosimov, V V ^a   Il'in, R N ^a   Sakharov, V I ^a   Serenkov, I T ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 34247552295     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063782607040252     Document Type: Article

References (5)

1. D. Hüttner, O. Mayer, J. Reiner, and G. Linker, Nucl. Instrum. Methods Phys. Res. B 118, 578 (1996).
2. D. V. Denisov, I. T. Serenkov, V. I. Sakharov, et al., Phys. Solid State 45, 2194 (2003).
3. V. V. Afrosimov, R. N. Il'in, S. F. Karmanenko, et al., Thin Solid Films 492, 146 (2005).
4. V. V. Afrosimov, G. O. Dzyuba, R. N. Il'in, et al., Tech. Phys. 41, 1240 (1996).
5. L. C. Feldman, J. W. Mayer, and S. T. Picraux, Material Analysis by Ion Channeling (Academic, New York, 1982), Chap. 5.