Increased power of broad area lasers (808nm / 980nm) and applicability to 10mm-bars with up to 1000Watt QCW

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6456, Issue , 2007, Pages

  Schroder D ^a   Meusel, J ^a   Hennig, P ^a   Lorenzen, D ^a   Schroder M ^a   Hulsewede R ^b   Sebastian, J ^b  

^a JENOPTIK Laserdiode GmbH   (Germany)

^b JENOPTIK Diode Lab GmbH   (Germany)

Author keywords

1000W; 1kW; COMD; High power diode laser; QCW; Single emitter

Indexed keywords

BEAM QUALITY; ELECTRONICS PACKAGING; LASER PULSES; MICROCHANNELS; POWER SPECTRAL DENSITY;

DUTY CYCLES; HIGH POWER DIODE LASERS; POWER DENSITY; SINGLE EMITTER; THERMAL ROLLOVER;

SEMICONDUCTOR LASERS;

EID: 34247368449     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.700021     Document Type: Conference Paper

References (3)

1. Lorenzen D. et al., Proc. of SPIE 610404, 2006, "Comparative performance studies of indium and gold-tin packaged diode laser bars"
2. Groussin B.et al., Electronics Letters, ISSN 0013-5194, "1000 W QCW output power from surface emitting GaAs / AlGaAs laser diode arrays",
3. Puchert R. et al., IEEE Packaging and manufacturing Technology Part A. Vol 23, 95-100 (2000)