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Volumn 6, Issue 1-3, 2007, Pages 15-18

3D Monte-Carlo device simulations using an effective quantum potential including electron-electron interactions

Author keywords

Effective quantum potential; Electron electron interactions; Monte Carlo simulation

Indexed keywords

COMPUTER SIMULATION; ELECTRON TRANSPORT PROPERTIES; ELECTRON-ELECTRON INTERACTIONS; MONTE CARLO METHODS; PERTURBATION TECHNIQUES; QUANTUM EFFICIENCY; THERMODYNAMICS; THREE DIMENSIONAL;

EID: 34247325467     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1007/s10825-006-0058-x     Document Type: Article
Times cited : (8)

References (10)
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    • Quantum potential approach to modeling nanoscale MOSFETs
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  • 5
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    • Quantum and Coulomb effects in nanodevices
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    • Vasileska, D.1
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    • Ferry, D.: The onset of quantization in ultra-submicron semiconductor devices. Superlatt. Microstruct. 27, 61 (2000)
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    • Ferry, D.1    Grubin, H.2
  • 8
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    • Utilization of quantum distribution functions for ultra-submicron device transport
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    • Iafrate, G., et al.: Utilization of quantum distribution functions for ultra-submicron device transport. J. de Physique 42 (Colloque C7), 307 (1981)
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  • 9
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.