Vertical stacks of shape-engineered InAs/InAlGaAs quantum dot and its influences on the lasing characteristics

Applied Physics Letters

Volumn 90, Issue 15, 2007, Pages

  Kim, Jin Soo ^a   Lee, Cheul Ro ^a   Choi, Byung Seok ^b   Kwack, Ho Sang ^b   Lee, Chul Wook ^b   Sim, Eun Deok ^b   Oh, Dae Kon ^b  

^a Chonbuk National University   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; INDIUM ARSENIDE; PHASE SEPARATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR LASERS; WAVE FUNCTIONS;

ELECTRON WAVE FUNCTION; LASING CHARACTERISTICS; STRAIN FIELDS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 34247276131     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2721854     Document Type: Article

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