Growth and optical properties of epitaxial BexZn1-xO alloy films

Journal of Crystal Growth

Volumn 303, Issue 2, 2007, Pages 506-509

  Han, M S ^a   Kim, J H ^a   Jeong, T S ^a   Park, J M ^a   Youn, C J ^a   Leem, J H ^b   Ryu, Y R ^c  

^a Chonbuk National University   (South Korea)

^b Lichell   (South Korea)

^c MOXtronics Inc   (United States)

Author keywords

A1. Band gap energy; A3. Hybrid electron beam deposition; B1. Beryllium; B2. BexZn1 xO; B3. Ultraviolet light emitting

Indexed keywords

BERYLLIUM; BERYLLIUM ALLOYS; CRYSTAL STRUCTURE; ELECTRON BEAMS; ENERGY GAP; EPITAXIAL GROWTH; LIGHT EMITTING DIODES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; X RAY DIFFRACTION;

ALLOY FILMS; HYBRID ELECTRON BEAM DEPOSITION; ULTRAVIOLET LIGHT EMITTING DIODES;

EPITAXIAL FILMS;

EID: 34247224925     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.348     Document Type: Article

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