Structural and thermodynamic properties of gallium arsenide with hexagonal wurtzite structure from first-principles analysis

Chinese Physics Letters

Volumn 24, Issue 3, 2007, Pages 814-817

  Cui, Hong Ling ^a   Zhang, Wei ^a   Cheng, Yan ^a   Chen, Xiang Rong ^a,b  

^a SICHUAN UNIVERSITY   (China)

^b INTERNATIONAL CENTRE FOR MATERIALS PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; III-V SEMICONDUCTORS; LATTICE CONSTANTS; SEMICONDUCTING GALLIUM; SPECIFIC HEAT; THERMAL EXPANSION; ZINC SULFIDE;

AXIAL RATIO; CAMBRIDGE; FIRST PRINCIPLES; GENERALIZED GRADIENT APPROXIMATIONS; HEXAGONAL WURTZITE; HEXAGONAL WURTZITE STRUCTURE; PLANE-WAVE METHOD; PRESSURE DERIVATIVES; PRINCIPLE ANALYSIS; ULTRASOFT PSEUDOPOTENTIALS;

GALLIUM ARSENIDE;

EID: 34247197703     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/24/3/063     Document Type: Article

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