Effects of oxygen partial pressure on the microstructure and electrical properties of indium tin oxide film prepared by d.c. magnetron sputtering

Thin Solid Films

Volumn 258, Issue 1-2, 1995, Pages 274-278

  Choi, Chaun Gi ^a   No, Kwangsoo ^a   Lee, Won Jae ^a   Kim, Ho Gi ^a   Jung, Soo Ok ^a   Lee, Won Jong ^a   Kim, Wook Sung ^b   Kim, Se Jong ^b   Yoon, Cheon ^b  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Samsung Corning Co Ltd   (South Korea)

Author keywords

Crystal orientation; Indium; Oxygen; Vacancies

Indexed keywords

EID: 34247097777     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(94)06354-0     Document Type: Article

References (11)

1. Preparation of conducting and transparent thin films of tin-doped indium oxide by magnetron sputtering