SIMS depth profile study using metal cluster complex ion bombardment

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 258, Issue 1, 2007, Pages 242-245

  Tomita, M ^a   Kinno, T ^a   Koike, M ^a   Tanaka, H ^a   Takeno, S ^a   Fujiwara, Y ^b   Kondou, K ^b   Teranishi, Y ^b   Nonaka, H ^b   Fujimoto, T ^b   Kurokawa, A ^b   Ichimura, S ^b  

^a TOSHIBA CORPORATION   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Cluster ion; Depth profile; Depth resolution; Ir4 (CO)7+; SIMS; Sputtering yield

Indexed keywords

CARBON MONOXIDE; IRIDIUM; OXYGEN; POSITIVE IONS; SECONDARY ION MASS SPECTROMETRY; SPUTTERING;

CLUSTER IONS; DEPTH PROFILES; DEPTH RESOLUTION; ION ENERGY; METAL CLUSTER COMPLEXES;

ION BOMBARDMENT;

EID: 34147099030     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.12.109     Document Type: Article

References (9)

1. Iltgen K., Bendel C., Benninghoven A., and Niehuis E. J. Vac. Sci. Technol. A 15 (1997) 460
2. Gillen G., Walker M., Thompson P., and Bennett J. J. Vac. Sci. Technol. B 18 (2000) 503
3. Gillen G., Batteas J., Michaels C., Chi P., Small J., Windsor E., Fahey A., Verkouteren J., and Kim K.J. Appl. Surf. Sci. 252 (2006) 6521
4. Mizota T., Nonaka H., Fujimoto T., Kurokawa A., and Ichimura S. Appl. Surf. Sci. 231-232 (2004) 945
5. Fujiwara Y., Kondou K., Teranishi Y., Nonaka H., Fujimoto T., Kurokawa A., and Ichimura S. Jpn. J. Appl. Phys. 45 (2006) 6000
6. Tomita M., Kinno T., Koike M., Tanaka H., Takeno S., Fujiwara Y., Kondou K., Teranishi Y., Nonaka H., Fujimoto T., Kurokawa A., and Ichimura S. Appl. Phys. Lett. 89 (2006) 053123
7. Fujiwara Y., Kondou K., Teranishi Y., Nonaka H., Fujimoto T., Kurokawa A., Ichimura S., and Tomita M. J. Appl. Phys. 100 (2006) 043305
8. Barlow R.D., Dowsett M.G., Fox H.S., Kubiak R.A.A., and Newstead S.M. Nucl. Instr. and Meth. B 72 (1992) 442
9. Tomita M., Hongo C., Suzuki M., and Takenaka M. J. Vac. Sci. Technol. B 22 (2004) 317