Impact-ionization-induced bandwidth-enhancement of a Si-SiGe-based avalanche photodiode operating at a wavelength of 830 nm with a gain-bandwidth product of 428 GHz

IEEE Photonics Technology Letters

Volumn 19, Issue 7, 2007, Pages 474-476

  Shi, J W ^a   Wu, Y S ^a   Li, Z R ^a   Chen, P S ^b  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b MINGHSIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Optical receivers; Photodiode (PD); Silicon germanium (SiGe)

Indexed keywords

AVALANCHE PHOTODIODES; GERMANIUM; IMPACT IONIZATION; NATURAL FREQUENCIES; PHOTOCURRENTS; SILICON; SILICON ON INSULATOR TECHNOLOGY;

DIFFUSION CURRENT; INTERNAL RADIO-FREQUENCY GAIN;

OPTICAL RECEIVERS;

EID: 34047198462     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2007.893036     Document Type: Article

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