Depth resolution studies in SiGe delta-doped multilayers using ultralow-energy Cs+ secondary ion mass spectrometry

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 1, 2007, Pages 277-285

  Chanbasha, A R ^a   Wee, A T S ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ION BEAMS; OPTICAL RESOLVING POWER; SEMICONDUCTING SILICON COMPOUNDS; SURFACE ROUGHNESS;

ATOMIC MIXING; FULL WIDTH AT HALF MAXIMUM (FWHM); IMPACT ANGLES;

MULTILAYERS;

EID: 34047173733     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2429671     Document Type: Article

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