Silicon nanowire synthesis on metal implanted silicon substrates

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 257, Issue 1-2 SPEC. ISS., 2007, Pages 172-176

  Stelzner, Th ^a,b   Andra G ^b   Falk, F ^b   Wendler, E ^a   Wesch, W ^a   Scholz, R ^c   Christiansen, S ^c,d  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^b LEIBNIZ INSTITUTE OF PHOTONIC TECHNOLOGY   (Germany)

^c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^d MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

Author keywords

CVD; Ion implantation; Silicon nanowires; TEM

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; GOLD; ION IMPLANTATION; SEMICONDUCTING SILICON; TRANSMISSION ELECTRON MICROSCOPY;

GOLD DROPLET FORMATION; SILICON NANOWIRE SYNTHESIS; VAPOUR LIQUID SOLID (VLS) GROWTH;

NANOCRYSTALLINE SILICON;

EID: 33947707157     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2007.01.037     Document Type: Article

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