Combinatorial study on In-Ga-Zn-O semiconductor films as active-channel layers for thin-film transistor

Materials Research Society Symposium Proceedings

Volumn 928, Issue , 2006, Pages 80-85

  Iwasaki, Tatsuya ^a   Itagaki, Naho ^a   Den, Tohru ^a   Kumomi, Hideya ^a   Nomura, Kenji ^b   Kamiya, Toshio ^b   Hosono, Hideo ^b  

^a CANON INC   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ARGON; CHEMICAL ANALYSIS; DEPOSITION; DIGITAL LIBRARIES; MAGNETRON SPUTTERING; PARTIAL PRESSURE; SEMICONDUCTOR MATERIALS; SYNTHESIS (CHEMICAL);

ACTIVE-CHANNEL LAYERS; FIELD-EFFECT MOBILITY; MIXED-GAS ATMOSPHERE; RADIO-FREQUENCY MAGNETRON SPUTTERING; ROOM TEMPERATURE;

THIN FILM TRANSISTORS;

EID: 33947687865     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-0928-gg10-04     Document Type: Conference Paper

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