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Volumn 257, Issue 1-2 SPEC. ISS., 2007, Pages 60-63

Nano-cluster formation in Ge+Sn implanted SiO2 layers

Author keywords

GeSn nano clusters; Ion implantation; TEM

Indexed keywords

CATHODOLUMINESCENCE; GERMANIUM; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEGREGATION (METALLOGRAPHY); SILICA; TRANSMISSION ELECTRON MICROSCOPY;

EID: 33947676262     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.12.116     Document Type: Article
Times cited : (1)

References (15)
  • 7
    • 33947626847 scopus 로고    scopus 로고
    • R. Ragan, Direct Energy Bandgap Group IV Alloys and Nanostructures, Dissertation, Pasadena, CA, 2002.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.