Temperature-dependent carrier recombination processes in nanocrystalline Si/SiO2 multilayers studied by continuous-wave and time-resolved photoluminescence

Journal of Physics D: Applied Physics

Volumn 40, Issue 5, 2007, Pages 1339-1342

  Kim, Sung ^a   Min Park, Yong ^a   Choi, Suk Ho ^a   Joong Kim, Kyung ^b   Hoon Choi, Dong ^c  

^a Kyung Hee University   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

^c Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ION BEAM ASSISTED DEPOSITION; MULTILAYERS; NANOCRYSTALLINE MATERIALS; PHOTOLUMINESCENCE; SILICON WAFERS;

CARRIER RECOMBINATION PROCESSES; DEFECT STATES;

SILICA;

EID: 33947658429     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/5/005     Document Type: Article

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