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Volumn 2005, Issue , 2005, Pages
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Very high power PEBB technology
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Author keywords
FACTS; High power discrete device; IGCT; IGET; Multilevel converters
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Indexed keywords
ELECTRIC LOSSES;
ELECTRIC POTENTIAL;
SEMICONDUCTOR DEVICES;
FACTS;
HIGH POWER DISCRETE DEVICE;
IGCT;
IGET;
MULTILEVEL CONVERTERS;
POWER DENSITY;
POWER SEMICONDUCTORS;
POWER ELECTRONICS;
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EID: 33947642710
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/epe.2005.219729 Document Type: Conference Paper |
Times cited : (11)
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References (6)
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