A WORM-type memory device with rectifying effect based on a conjugated copolymer of PF6Eu on Si substrate

Materials Research Society Symposium Proceedings

Volumn 937, Issue , 2006, Pages 114-119

  Tan, Y P ^a   Ling, Q D ^a   Teo Eric, Y H ^a   Song, Y ^a   Lim, S L ^a   Lo Patrick, G Q ^b   Kang, E T ^a   Zhu, Chunxiang ^a   Chan, D S H ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CONJUGATED POLYMERS; COPOLYMERS; CURRENT VOLTAGE CHARACTERISTICS; HETEROJUNCTIONS; PASSIVE NETWORKS; THRESHOLD VOLTAGE;

CURRENT RATIO; MEMORY CELLS; PASSIVE MATRIX CIRCUITS; RELIABILITY TESTS;

DATA STORAGE EQUIPMENT;

EID: 33947632558     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-0937-m10-29     Document Type: Conference Paper

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