A modern low loss, high turn-off capability GCT gate drive concept

2005 European Conference on Power Electronics and Applications

Volumn 2005, Issue , 2005, Pages

  Gruening, H E ^a   Koyanagi, K ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Bipolar device; Discrete power device; IGCT; Power semiconductor device

Indexed keywords

ELECTRIC DRIVES; ELECTROLYTIC CAPACITORS; ENERGY DISSIPATION; POWER SUPPLY CIRCUITS; TOPOLOGY;

BIPOLAR DEVICE; DISCRETE POWER DEVICE; GATE DRIVERS; POWER SEMICONDUCTOR DEVICE;

POWER ELECTRONICS;

EID: 33947632004     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/epe.2005.219695     Document Type: Conference Paper

References (8)

1. P.K. Steimer, H. Gruening, J. Werninger, "The IGCT - the key technology for low cost, high reliable high power converters with series connected turn-off devices", in Conf. Rec. EPE, Trondheim, Norway 1997
2. P. K. Steimer, J. K.Steinke, H. E. Gruening, A reliable, Interface friendly Medium Voltage Drive based on the robust IGCT and DTC technologies IEEE IAS Annual Meeting 1999, Poenix, pp. 1505-1512.
3. Navid R. Zargari e.a., "A New Current-Source Converter Using a Symmetric Gate-Commutated Thyristor (SGCT)" IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, VOL. 37, NO. 3, MAY/JUNE 2001
4. E. Carroll, IGCT: The First Four Years, IPEE 2000, Bejing.
5. H. Gruening e.a., "High-Power hard-driven GTO module for 4.5kV / 3kA snubberless operation", in Conf. Rec. PCIM, Nürnberg, 21. - 23. Mai 1996, pp.169-183.
6. H. Gruening, A. Zuckerberger, "Hard drive of high-power GTOs: Better switching capability obtained through improved gate-units", in Conf. Rec. 1996 IEEE IAS, pp. 1474-1480.
7. H. Gruening, T. Tsuchiya, K. Satoh, Y. Yamaguchi, F. Mizohata, K. Takao, "6 kV 5 kA RCGCT with advanced gate drive unit". Power Semiconductor Devices and ICs, 2001. ISPSD'01. Proceedings of the 13th International Symposium on , 4-7 June 2001 Pages:133-136
8. Private communication.