Diode end-pumped passively Q-switched Nd3+:GdVO4 self-raman laser at 1176 nm

Chinese Physics Letters

Volumn 24, Issue 1, 2007, Pages 112-114

  Wang, Bao Shan ^a,b   Peng, Ji Ying ^a,b   Miao, Jie Guang ^a,b   Li, Yi Min ^a,b   Hao, Er Juan ^a,b   Zhang, Zhe ^a,b   Gao, Lan Lan ^a,b   Tan, Hui Ming ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

[No Author keywords available]

Indexed keywords

PUMPING (LASER); Q SWITCHING; YTTRIUM ALUMINUM GARNET;

DIODE END-PUMPED; INCIDENT PUMP POWER; LASER OUTPUT; OPTICAL CONVERSION; PASSIVELY Q-SWITCHED; PULSE ENERGIES; RAMAN LASERS; SELF-RAMAN LASER; SLOPE EFFICIENCIES; YAG;

SATURABLE ABSORBERS;

EID: 33947592182     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/24/1/031     Document Type: Article

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