Comparison of GaP and PH3 as dopant sources for STM-based device fabrication

Nanotechnology

Volumn 18, Issue 6, 2007, Pages

  Goh, Kuan Eng Johnson ^a,b   Oberbeck, L ^a   Butcher, M J ^a   Curson, N J ^a   Ruess F J ^a   Simmons, M Y ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; NANOCRYSTALLINE SILICON; PHOSPHORUS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR DOPING;

DOPANT DEVICES; ELECTRICAL CHARACTERISTICS; LITHOGRAPHIC PATTERNS;

GALLIUM PHOSPHIDE;

PHOSPHINE; SILICON;

ARTICLE; DEVICE; NANOANALYSIS; PRIORITY JOURNAL; SCANNING TUNNELING MICROSCOPY;

EID: 33947501060     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/18/6/065301     Document Type: Article

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