The influence of cationic impurities in silica on its crystallization and point of zero charge

Journal of Colloid and Interface Science

Volumn 309, Issue 1, 2007, Pages 155-159

  Milonjić, Slobodan K ^a   Čerović, Ljiljana S ^a   Čokeša, Djuro M ^a   Zec, Slavica ^a  

^a UNIVERSITY OF BELGRADE   (Serbia)

Author keywords

EDXRF; ICP AES; Point of zero charge; Silica; XRD

Indexed keywords

AMORPHOUS SILICON; CRYSTAL IMPURITIES; CRYSTALLIZATION; HEAT TREATMENT; X RAY DIFFRACTION;

BATCH EQUILIBRATION METHOD; ICP-AES; POINT OF ZERO CHARGE; TEMPERATURE RANGE;

SILICA;

CATION; HYDROCHLORIC ACID; SILICON DIOXIDE;

AIR TEMPERATURE; ARTICLE; BATCH PROCESS; CRYSTAL STRUCTURE; CRYSTALLIZATION; DESORPTION; HEAT TREATMENT; PH; PRIORITY JOURNAL; X RAY DIFFRACTION; X RAY FLUORESCENCE;

EID: 33947386277     PISSN: 00219797     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcis.2006.12.033     Document Type: Article

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