Thermal imaging of wafer temperature in MBE using a digital camera

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 105-108

  Jackson, A W ^a   Gossard, A C ^a  

^a University of California   (United States)

Author keywords

A3. Molecular beam epitaxy

Indexed keywords

DIGITAL CAMERAS; HEAT RADIATION; IMAGE SENSORS; MOLECULAR BEAM EPITAXY; SILICON WAFERS;

SILICON SENSOR; SINGLE LENS REFLEX (SLR) CAMERA; SUBSTRATE TEMPERATURE;

INFRARED IMAGING;

EID: 33947331174     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.12.020     Document Type: Article

References (3)

1. Fang X.M., Yurasits T.R., Loubychev D., Wu Y., Liu W.K., DeBruzzi M., Priddy S., and Schiprett C. Improvement of substrate temperature uniformity by using a dual-zone substrate heater in a commercial 4 in. GEN-III molecular beam epitaxy single-wafer reactor. J. JVST B 19 4 (2001) 1554
2. Conversion performed by LifePixel, Lynnwood, WA 〈www.lifepixel.com〉.
3. IRIS v.5.33 〈http://astrosurf.com/buil/〉.