Zn irradiation effects in MBE growth of MgSe/BeZnSeTe II-VI compound superlattices on InP substrates

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 273-276

  Nomura, Ichirou ^a   Yamazaki, Tomohiro ^a   Hayashi, Hiroaki ^a   Hayami, Koichi ^a   Kato, Masaki ^a   Kishino, Katsumi ^a  

^a SOPHIA UNIVERSITY   (Japan)

Author keywords

A1. High resolution X ray diffraction; A1. Interfaces; A3. Molecular beam epitaxy; A3. Superlattices; B2. Semiconducting II VI materials

Indexed keywords

ION BOMBARDMENT; MAGNESIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION ANALYSIS; ZINC;

MOLECULAR BEAM IRRADIATION; ROOM TEMPERATURE (RT); SEMICONDUCTING II-VI MATERIALS; X-RAY DIFFRACTION (XRD) SATELLITE PEAKS;

SUPERLATTICES;

EID: 33947320427     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.183     Document Type: Article

References (4)

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3. Nomura I., Nakai Y., Hayami K., Saitoh T., and Kishino K. Phys. Stat. Solidi (b) 243 (2006) 924
4. Vèrié C. J. Crystal Growth 185/185 (1998) 1061