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Volumn 37, Issue 1-2, 2007, Pages 204-207

Electronic properties of InAs/GaAs nanowire superlattices

Author keywords

Electronic structure; Nanowires; Strains

Indexed keywords

ELECTRONIC STRUCTURE; ELECTRONS; HETEROJUNCTIONS; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN RELAXATION;

EID: 33947318769     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2006.07.011     Document Type: Article
Times cited : (9)

References (20)
  • 12
    • 33947308410 scopus 로고    scopus 로고
    • O. Madelung, M. Schulz, H. Weiss, Landolt-Börnstein Numerical Data and Functional Relationships in Science and Technology, New Series, Group III, vol. 17a, Springer, New York, 1982.
  • 14
    • 33947315084 scopus 로고    scopus 로고
    • ∞ = 12 to compute the image charge potential Σ (r).
  • 19
    • 33947303664 scopus 로고    scopus 로고
    • The critical thickness for 2D growth is actually very small. We would like to stress that these calculations, although showing strong elastic relaxation, cannot rule out the formation of dislocations or the Stranski-Krastanov like growth of InAs pyramids in the NWSLs.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.