Investigation of CdSe quantum dots in MgS barriers as active region in light emitting diodes

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 789-792

  Gust, A ^a   Kruse, C ^a   Hommel, D ^a  

^a UNIVERSITY OF BREMEN   (Germany)

Author keywords

A3. Quantum dots; B2. II VI Semiconductors; B3. Light emitting devices; B3. Nanoelectronic devices

Indexed keywords

ELECTROLUMINESCENCE; ELECTRON TUNNELING; LIGHT EMITTING DIODES; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTOR MATERIALS; ZINC COMPOUNDS;

CURRENT DRIVING CONDITIONS; II-VI SEMICONDUCTORS; NANOELECTRONIC DEVICES; TURN-ON VOLTAGES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33947312460     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.322     Document Type: Article

References (3)

1. Sebald K., Michler P., Passow T., Hommel D., Bacher G., and Forchel A. Appl. Phys. Lett. 81 (2002) 2920
2. Passow T., Heinke H., Schmidt T., Falta J., Stockmann A., Selke H., Ryder P.L., Leonardi K., and Hommel D. Phys. Rev. B 64 (2001) 193311
3. Lohmeyer H., Sebald K., Kruse C., Kroger R., Gutowski J., Hommel D., Wiersig J., Baer N., and Jahnke F. Appl. Phys. Lett. 88 (2006) 051101