Orientation and size dependence on structural stability in silicon nanowires: A transferable tight-binding calculation study

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 871-875

  Maeda, S ^a   Akiyama, T ^a   Nakamura, K ^a   Ito, T ^a  

^a Department of Physics Engineering ^*  (Japan)

Author keywords

A1. Computer simulation; A1. Nanostructure; A1. Surface; B2. Semiconducting silicon

Indexed keywords

BINDING ENERGY; CRYSTAL ORIENTATION; INTERFACIAL ENERGY; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH;

COHESIVE ENERGY; OXIDE-ASSISTED GROWTH (OAG); SILICON NANOWIRES; SIZE DEPENDENCE; STRUCTURAL STABILITY; TRANSFERABLE-TIGHT-BINDING (TB) MODELS;

NANOWIRES;

EID: 33947308412     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.180     Document Type: Article

References (20)

1. Westwater J., Gosain D.P., Tomiya S., Usui S., and Ruda H. J. Vac. Sci. Technol. B 15 (1997) 554
2. Zhang Y.F., Tang Y.H., Wang N., Yu D.P., Lee C.S., Bello I., and Lee S.T. Appl. Phys. Lett. 72 (1998) 1835
3. Wang N., Zhang Y.F., Tang Y.H., Lee C.S., and Lee S.T. Appl. Phys. Lett. 73 (1998) 3902
4. Cui Y., Lauhon L.J., Gudiksen M.S., Wang J., and Lieber C.M. Appl. Phys. Lett. 78 (2001) 2214
5. Ma D.D.D., Lee C.S., Au F.C.K., Tong S.Y., and Lee S.T. Science 299 (2003) 1874
6. Schubert L., Werner P., Zakharov N.D., Gerth G., Kolb F.M., Long L., and Gosele U. Appl. Phys. Lett. 84 (2004) 4968
7. Wu Y., Cui Y., Huynh L., Barrelet C.J., Bell D.C., and Leiber C.M. Nano Lett. 4 (2004) 433
8. Li C.P., Lee C.S., Ma X.L., Wang N., Zhang R.Q., and Lee S.T. Adv. Mater. 15 (2003) 607
9. Kikkawa J., Ohno Y., and Takeda S. Appl. Phys. Lett. 86 (2005) 123109
10. Ohno T., Shiraishi K., and Ogawa T. Phys. Rev. Lett. 69 (1992) 2400
11. Read A.J., Needs R.J., Nash K.J., Canham L.T., Calcott P.D.J., and Qteish A. Phys. Rev. Lett. 69 (1992) 1232
12. Yeh C.-Y., Zhang S.B., and Zunger A. Appl. Phys. Lett. 63 (1993) 3455
13. Filonov A.B., Petrov G.V., Novikov V.A., and Borisenko V.E. Appl. Phys. Lett. 67 (1995) 1090
14. Zhao X., Wei C.M., Yang L., and Chou M.Y. Phys. Rev. Lett. 92 (2004) 236805
15. Rurali R., and Lorente N. Phys. Rev. Lett. 94 (2005) 026805
16. Kwon I., Biswas R., Wang C.Z., Ho K.M., and Soukoulis C.M. Phys. Rev. B 49 (1994) 7242
17. Stekolnikov A.A., Furthmuller J., and Bechstedt F. Phys. Rev. B 65 (2002) 115318
18. Eaglesham D.J., White A.E., Feldman L.C., Moriya N., and Jacobson D.C. Phys. Rev. Lett. 70 (1993) 1643
19. The low surface energy in Si{1 1 1} clean surface in the experiment in Ref. [18] is due to long-range surface reconstructions such as Si(1 1 1)-(7×7) surface, which is not taken into account in the present study.
20. Oshiyama A. Phys. Rev. Lett. 74 (1995) 130