MBE growth of GaN using 15N isotope for nuclear magnetic resonance applications

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 417-419

  Novikov, S V ^a   Morris, R D ^a   Kent, A J ^a   Geen, H L ^a   Foxon, C T ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

ISOTOPES; MOLECULAR BEAM EPITAXY; NUCLEAR MAGNETIC RESONANCE; OPTICAL PUMPING; SPIN POLARIZATION;

NUCLEAR POLARIZATION; PLASMA ASSISTED MOLECULAR BEAM EPITAXY; SEMICONDUCTING III-V MATERIALS;

GALLIUM NITRIDE;

EID: 33947304927     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.043     Document Type: Article

References (6)

1. Kuhns P.L., Kleinhammes A., Schmiedel T., Moulton W.G., Chabrier P., Sloan S., Hughes E., and Bowers C.R. Phys. Rev. B 55 (1997) 7824
2. Michal C.A., and Tycko R. Phys. Rev. B 60 (1999) 8672
3. Tycko R. Solid State NMR 11 (1998) 1
4. Novikov S.V., Edmonds K.W., Zhao L.X., Giddings A.D., Wang K.Y., Campion R.P., Staddon C.R., Fay M.W., Han Y., Brown P.D., Sawicki M., Gallagher B.L., and Foxon C.T. J. Vac. Sci. Technol. B 23 (2005) 1294
5. Tycko R. Mol. Phys. 95 (1998) 1169
6. Barrett S.E., Tycko R., Pfeiffer L.N., and West K.W. Phys. Rev. Lett. 72 (1994) 1368