Epitaxial growth of bcc Mn films on 4H-SiC(0 0 0 1) by molecular beam epitaxy

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 607-610

  Wang, Wenhong ^a   Takano, Fumiyoshi ^a   Ofuchi, Hironori ^b   Akinaga, Hiro ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

Author keywords

A1. Atomic force microscopy; A1. Reflection high energy electron diffraction; A1. X ray absorption fine structure; A1. X ray diffraction; A3. Molecular beam epitaxy; B1. Mn films

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; HIGH ENERGY ELECTRON DIFFRACTION; MANGANESE; MOLECULAR BEAM EPITAXY; SILICON CARBIDE; X RAY DIFFRACTION ANALYSIS;

BODY-CENTERED-CUBIC (BCC) MATERIALS; REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION; X-RAY ABSORPTION FINE STRUCTURE;

SUPERCONDUCTING FILMS;

EID: 33947304621     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.136     Document Type: Article

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